Thermionic field emission at electrodeposited Ni–Si Schottky barriers
نویسندگان
چکیده
منابع مشابه
Tuning from thermionic emission to ohmic tunnel contacts via doping in Schottky-barrier nanotube transistors.
Electrical power >1 mW is dissipated in semiconducting single-walled carbon nanotube devices in a vacuum. After high-power treatment, devices exhibit lower on currents and intrinsic, ambipolar behavior with near-ideal thermionic emission from Schottky barriers of height one-half the band gap. Upon exposure to air, devices recover p-type behavior, with positive threshold and ohmic contacts. The ...
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ژورنال
عنوان ژورنال: Solid-State Electronics
سال: 2008
ISSN: 0038-1101
DOI: 10.1016/j.sse.2008.03.002